4-245 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 1.5a dual high-speed, power mosfet drivers tc4426 tc4427 tc4428 output input gnd effective input c = 12 pf 300 mv inverting outputs noninverting outputs v dd tc4426/tc4427/tc4428 4.7v notes: 1.tc4426 has 2 inverting drivers; tc4427 has 2 noninverting drivers. 2. tc4428 has one inverting and one noninverting driver. 3. ground any unused driver input. features n high peak output current ............................... 1.5a n wide operating range .......................... 4.5v to 18v n high capacitive load drive capability ........................ 1000 pf in 25 nsec n short delay time ................................ <40nsec typ n consistent delay times with changes in supply voltage n low supply current with logic 1 input .................................... 4ma with logic 0 input ................................. 400 m a n low output impedance ....................................... 7 w n latch-up protected: will withstand >0.5a reverse current ................................. down to C 5v n input will withstand negative inputs n esd protected .....................................................4kv n pinout same as tc426/tc427/tc428 general description the tc4426/4427/4428 are improved versions of the earlier tc426/427/428 family of buffer/drivers (with which they are pin compatible). they will not latch up under any conditions within their power and voltage ratings. they are not subject to damage when up to 5v of noise spiking (of either polarity) occurs on the ground pin. they can accept, without damage or logic upset, up to 500ma of reverse current (of either polarity) being forced back into their outputs. all terminals are fully protected against up to 4kv of electrostatic discharge. as mosfet drivers, the tc4426/4427/4428 can easily switch 1000 pf gate capacitances in under 30nsec, and provide low enough impedances in both the on and off states to ensure the mosfet's intended state will not be affected, even by large transients. other compatible drivers are the tc4426a/27a/28a. these drivers have matched input to output leading edge and falling edge delays, td1 and td2, for processing short duration pulses in the 25 nanoseconds range. they are pin compatible with the tc4426/27/28. tc4426/7/8-8 10/21/96 functional block diagram ordering information temperature part no. package range tc4426coa 8-pin soic 0 c to +70 c tc4426cpa 8-pin plastic dip 0 c to +70 c tc4426eoa 8-pin soic C 40 c to +85 c tc4426epa 8-pin plastic dip C 40 c to +85 c tc4426mja 8-pin cerdip C 55 c to +125 c tc4427coa 8-pin soic 0 c to +70 c tc4427cpa 8-pin plastic dip 0 c to +70 c tc4427eoa 8-pin soic C 40 c to +85 c tc4427epa 8-pin plastic dip C 40 c to +85 c tc4427mja 8-pin cerdip C 55 c to +125 c TC4428COA 8-pin soic 0 c to +70 c tc4428cpa 8-pin plastic dip 0 c to +70 c tc4428eoa 8-pin soic C 40 c to +85 c tc4428epa 8-pin plastic dip C 40 c to +85 c tc4428mja 8-pin cerdip C 55 c to +125 c
4-246 telcom semiconductor, inc. 1.5a dual high-speed power mosfet drivers tc4426 tc4427 tc4428 absolute maximum ratings* supply voltage ......................................................... +22v input voltage, in a or in b . (v dd + 0.3v) to (gnd C 5.0v) maximum chip temperature ................................. +150 c storage temperature range ................ C 65 c to +150 c lead temperature (soldering, 10 sec) ................. +300 c package thermal resistance cerdip r q j-a ................................................ 150 c/w cerdip r q j-c .................................................. 50 c/w pdip r q j-a ................................................... 125 c/w pdip r q j-c ..................................................... 42 c/w soic r q j-a ................................................... 155 c/w soic r q j-c ..................................................... 45 c/w operating temperature range c version ............................................... 0 c to +70 c e version .......................................... C 40 c to +85 c m version ....................................... C 55 c to +125 c package power dissipation (t a 70 c) plastic .............................................................730mw cerdip ............................................................800mw soic ...............................................................470mw *static-sensitive device. unused devices must be stored in conductive material. protect devices from static discharge and static fields. stresses above those listed under "absolute maximum ratings" may cause perma- nent damage to the device. these are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. electrical characteristics: t a = +25 c with 4.5v v dd 18v, unless otherwise specified. symbol parameter test conditions min typ max unit input v ih logic 1 high input voltage 2.4 v v il logic 0 low input voltage 0.8 v i in input current 0v v in v dd C 1 1 m a output v oh high output voltage v dd C 0.025 v v ol low output voltage 0.025 v r o output resistance v dd = 18v, i o = 10 ma 7 10 w i pk peak output current duty cycle 2%, t 30 m sec 1.5 a i rev latch-up protection duty cycle 2% > 0.5 a withstand reverse current t 30 m sec switching time (note 1) t r rise time figure 1 19 30 nsec t f fall time figure 1 19 30 nsec t d1 delay time figure 1 20 30 nsec t d2 delay time figure 1 40 50 nsec power supply i s power supply current v in = 3v (both inputs) 4.5 ma v in = 0v (both inputs) 0.4 ma note: 1. switching times are guaranteed by design. pin configurations tc4426 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b v dd nc = no internal connection tc4427 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b tc4428 1 2 3 4 nc 5 6 7 8 out a out b nc in a gnd in b 2,4 7,5 inverting 2,4 7,5 noninverting v dd 2 4 differential 7 5 v dd note: soic pinout is identical to dip.
4-247 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 1.5a dual high-speed power mosfet drivers tc4426 tc4427 tc4428 electrical characteristics (cont.): specifications measured over operating temperature range with 4.5v v dd 18v, unless otherwise specified. symbol parameter test conditions min typ max unit input v ih logic 1 high input voltage 2.4 v v il logic 0 low input voltage 0.8 v i in input current 0v v in v dd C 10 10 m a output v oh high output voltage v dd C 0.025 v v ol low output voltage 0.025 v r o output resistance v dd = 18v, i o = 10 ma 9 12 w i pk peak output current duty cycle 2%, t 300 m sec 1.5 a i rev latch-up protection duty cycle 2% > 0.5 a withstand reverse current t 300 m sec switching time (note 1) t r rise time figure 1 40 nsec t f fall time figure 1 40 nsec t d1 delay time figure 1 40 nsec t d2 delay time figure 1 60 nsec power supply i s power supply current v in = 3v (both inputs) 8 ma v in = 0v (both inputs) 0.6 note: 1. switching times are guaranteed by design. +5v input 10% 90% 10% 90% 10% 90% v dd output t d1 0v 90% 10% 10% 10% t f 90% +5v input v dd output 0v 0v 0v 90% output input 0.1 ? c l = 1000 pf 4.7 ? v dd = 18v inverting driver 3 2,4 5,7 6 noninverting driver t f t d2 t r t r t d1 t d2 input: 100 khz, square wave, t rise = t fall 10ns figure 1. switching time test circuit note: the values on this graph represent the loss seen by both drivers in a package during one complete cycle. for a single driver, divide the stated values by 2. for a single transition of a single driver, divide the stated value by 4. 200 0 400 600 800 1000 1200 1400 1600 0 10 20 30 40 50 60 70 80 90 100 110 120 ambient temperature ( c) max. power (mw) 8 pin dip thermal derating curves 8 pin cerdip 8 pin soic crossover energy loss 4 a ?sec 18 6 8 10 12 14 16 8 7 6 5 4 3 2 10 ? 10 ? 9 v dd
4-248 telcom semiconductor, inc. typical characteristics rise time vs. capacitive load time (nsec) rise and fall times vs. temperature t rise temperature ( c) c = 1000 pf load v = 17.5v dd propagation delay vs. supply voltage t fall (nsec) 4681012 14 16 18 fall time vs. supply voltage 100 pf 470 pf 1000 pf 2200 pf 1500 pf t rise (nsec) 4681012 14 16 18 rise time vs. supply voltage v dd 100 pf 470 pf 2200 pf t a = 25 c t a = 25 c 1500 pf 100 1000 10,000 c (pf) load 5v 10v 15v fall time vs. capacitive load 100 1000 10,000 5v 10v 60 ?5 ?5 5 25 45 65 85 105 125 ?5 60 4681012 14 16 18 delay time (nsec) t d2 t d1 c = 1000 pf load 100 v dd c (pf) load t fall v dd 1000 pf 80 60 40 20 0 100 80 60 40 20 0 100 80 60 40 20 0 100 80 60 40 20 0 50 40 30 20 10 50 40 30 20 10 t rise (nsec) t fall (nsec) 15v t a = 25 c t a = 25 c t a = 25 c 1.5a dual high-speed power mosfet drivers tc4426 tc4427 tc4428
4-249 telcom semiconductor, inc. 7 6 5 4 3 1 2 8 typical characteristics (cont.) quiescent supply current vs. voltage high-state output resistance t a ( c) 4 t a ( c) i quiescent (ma) 4.0 3.5 3.0 2.5 2.0 i (ma) quiescent 18 6 8 10 12 14 16 delay time (nsec) v drive (v) 60 0.1 ?5 ?5 ?5 5 25 45 65 85 105 125 quiescent supply current vs. temperature effect of input amplitude on delay time propagation delay time vs. temperature 4681012 14 16 18 4681012 14 16 18 20 low-state output resistance ?5 ?5 ?5 5 25 45 65 85 105 125 c = 1000 pf load v = 10v dd t = +25 c a v = 1000 pf load v = 18v dd t d2 t d2 both inputs = 1 both inputs = 0 0246810 t d1 v dd v dd v dd 50 40 30 20 10 delay time (nsec) 60 50 40 30 20 10 1 25 15 10 8 5 r ds(on) ( w ) 20 25 15 10 8 5 t d1 worst case @ t j = +150 c typ @ t a = +25 c worst case @ t j = +150 c typ @ t a = +25 c r ds(on) ( w ) v = 18v dd both inputs = 1 1.5a dual high-speed power mosfet drivers tc4426 tc4427 tc4428
4-250 telcom semiconductor, inc. supply current characteristics (load on single output only) supply current vs. capacitive load 60 100 1000 10,000 i supply (ma) supply current vs. capacitive load 100 1000 10,000 supply current vs. capacitive load 100 1000 10,000 supply current vs. frequency 10 100 1000 frequency (khz) supply current vs. frequency 10 100 1000 frequency (khz) supply current vs. frequency 10 100 1000 frequency (khz) 2 mhz 600 khz 200 khz 20 khz 900 khz 2 mhz 600 khz 200 khz 20 khz 900 khz 2 mhz 200 khz 20 khz 600 khz 900 khz 1000 pf 2200 pf 1000 pf 2200 pf 100 pf 1000 pf 2200 pf 100 pf v = 18v dd v = 12v dd v = 12v dd v = 6v dd v = 6v dd 100 pf c (pf) load c (pf) load c (pf) load v = 18v dd 50 40 30 20 10 0 60 50 40 30 20 10 0 60 50 40 30 20 10 0 60 50 40 30 20 10 0 60 50 40 30 20 10 0 60 50 40 30 20 10 0 i supply (ma) i supply (ma) i supply (ma) i supply (ma) i supply (ma) 1.5a dual high-speed power mosfet drivers tc4426 tc4427 tc4428
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